2T827A Transistors epitaxial silicon composite structures mezaplanarnye n-p-n reinforcement. Designed for use in low frequency amplifiers, stabilizers of voltage and current, pulsed power amplifiers, repeaters, switching devices, electronic protection and automation control systems. 2T827A: • transistor structure: n-p-n; • Pk t max - constant power dissipation collector with the heat sink: 125 W; • fgr - Boundary transistor current gain frequency for the circuit with common emitter: no less than 4 MHz; • Uker max - maximum collector-emitter voltage at a given current collector and a predetermined resistance in the base-emitter voltage: 100 V (1K); • Uebo max - Maximum voltage emitter-base reverse current at a given emitter and collector open circuit: 5; • Ik max - Maximum permissible DC Collector Current: 20 A; • Ik and max - The maximum permissible pulse collector current: 40 A; • Iker - Reverse current collector-emitter reverse voltage at specified collector-emitter voltage and resistance in the base-emitter: 3 mA (100V); • h21e - Static transistor current gain for the common-emitter: 750 ... 18000; • CK - collector junction capacity: not more than 400 pF; • Rke us - saturation resistance between the collector and emitter: no more than 0.2 Ohm

• Transistor silicon 2T827A analogue 2N6059, 2N6284, MJ3521, BDX67 USSR 1 pcs
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Transistor silicon 2T827A analogue 2N6059, 2N6284, MJ3521, BDX67 USSR 1 pcsUSSR